Title :
Photoluminescence spectra of high temperature vacuum annealed porous silicon
Author :
Dimitrov, D.B. ; Papadimitriou, D. ; Beshkov, G.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800°C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silicon nanocrystallites. The 1.8 eV band decreases with increasing annealing time following second-order kinetics, typical for silicon dihydride decomposition
Keywords :
annealing; elemental semiconductors; nanostructured materials; photoluminescence; porous materials; silicon; 800 C; Si; high temperature vacuum annealing; kinetics; nanocrystallites; photoluminescence spectra; porous silicon; silicon dihydride decomposition; Annealing; Circuits; Etching; Hydrogen; Kinetic theory; Photoluminescence; Photonic band gap; Silicon; Temperature; Tires;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625188
