Title :
Characterization of the silicon nitride-thermal oxide interface in ONO structures by ELS, XPS, ellipsometry, and numerical simulation [SONOS EEPROM]
Author :
Gritsenko, V.A. ; Morokov, Yu.N. ; Novikov, Yu.N. ; Petrenko, I.P. ; Svitasheva, S.N. ; Wong, W. ; Kwok, R. ; Chan, R.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
Using electron energy loss spectroscopy (ELS), XPS, and ellipsometry measurements, large amount of Si-Si bonds at Si3N4/thermal SiO2 interface are identified. Abnormally large value of refractive index (n=2.1) in the Si 3N4/SiO2 interface layer was obtained. The effective width of Si-rich interfacial layer is estimated to be about 5-10 Å. The excess silicon at Si3N4/SiO2 interface was created by replacing nitrogen with oxygen during the oxidation of Si3N 4. The abnormally large electron capturing at Si3N 4/SiO2 interface observed previously and the accumulation of positive charge at top interface of nitrided oxide under ionizing irradiation are explained with the existence of Si-Si bonds at Si3N4/SiO2 interface
Keywords :
EPROM; X-ray photoelectron spectra; electron spectroscopy; electron traps; elemental semiconductors; ellipsometry; leakage currents; oxidation; refractive index; semiconductor-insulator-semiconductor devices; silicon; silicon compounds; 5 to 10 angstrom; ELS; ONO structures; SONOS EEPROM; Si-SiO2-Si3N4-SiO2; XPS; dielectric thin films; electron capturing; electron energy loss spectroscopy; ellipsometry; ionizing irradiation; leakage currents; nitride-thermal oxide interface; numerical simulation; oxidation; positive charge accumulation; refractive index; Electrons; Ellipsometry; Energy loss; Energy measurement; Loss measurement; Nitrogen; Oxidation; Refractive index; Silicon; Spectroscopy;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625193
