• DocumentCode
    3160598
  • Title

    Thermoelectric properties of a-InGaZnO thin film

  • Author

    Fujimoto, Yuta ; Uenuma, Mutsunori ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

  • Author_Institution
    Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan
  • fYear
    2015
  • fDate
    4-5 June 2015
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    Thermoelectric properties of a-IGZO thin film were optimized by adjusting the carrier concentration. We found that the power factor (PF) has the maximum value of 82 × 10-6 W / mK2 at 300 K, where the carrier density was 7.70 × 1019 cm-3. Additionally, measured data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level is located on right over the potential barrier when the PF becomes maximum.
  • Keywords
    Fermi level; Seebeck effect; amorphous semiconductors; carrier density; gallium compounds; indium compounds; percolation; semiconductor thin films; zinc compounds; Fermi level; InGaZnO; carrier concentration; carrier density; percolation model; power factor; thermoelectric properties; thin film; Charge carrier density; Conductivity; Electric potential; Films; Plasma temperature; Temperature; Temperature measurement; TAOS; power factor; thermoelectric; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-8614-9
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2015.7158576
  • Filename
    7158576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3160598