DocumentCode :
3160598
Title :
Thermoelectric properties of a-InGaZnO thin film
Author :
Fujimoto, Yuta ; Uenuma, Mutsunori ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan
fYear :
2015
fDate :
4-5 June 2015
Firstpage :
114
Lastpage :
115
Abstract :
Thermoelectric properties of a-IGZO thin film were optimized by adjusting the carrier concentration. We found that the power factor (PF) has the maximum value of 82 × 10-6 W / mK2 at 300 K, where the carrier density was 7.70 × 1019 cm-3. Additionally, measured data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level is located on right over the potential barrier when the PF becomes maximum.
Keywords :
Fermi level; Seebeck effect; amorphous semiconductors; carrier density; gallium compounds; indium compounds; percolation; semiconductor thin films; zinc compounds; Fermi level; InGaZnO; carrier concentration; carrier density; percolation model; power factor; thermoelectric properties; thin film; Charge carrier density; Conductivity; Electric potential; Films; Plasma temperature; Temperature; Temperature measurement; TAOS; power factor; thermoelectric; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
Type :
conf
DOI :
10.1109/IMFEDK.2015.7158576
Filename :
7158576
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3160598
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