Title :
The influence of the self-consistency on intraband optical transitions in semiconductor quantum dot
Author :
Todorovic, G. ; Milanovic, V. ; Ikonic, Z. ; Indjin, D.
Author_Institution :
Fac. of Civil Eng., Belgrade Univ., Serbia
Abstract :
Within the envelope-function approximation a self-consistent procedure for calculating the energy structure, wave functions and charge distribution in spherically symmetric semiconductor quantum dots is presented, that takes account of both bound and free electron states. The Schrodinger and Poisson equation are solved iteratively while using the Morse-type parametrized potential to keep the charge neutrality in each iterative step. Numerical calculations performed for GaAs-Al0.3Ga0.7As based quantum dot indicate that the self-consistent potential very significantly modifies the free states wave functions and hence the bound-free transition matrix elements
Keywords :
III-V semiconductors; Morse potential; Schrodinger equation; aluminium compounds; bound states; gallium arsenide; iterative methods; semiconductor quantum dots; wave functions; GaAs-Al0.3Ga0.7As; Morse potential; Poisson equation; Schrodinger equation; bound electron states; charge distribution; energy structure; envelope function approximation; free electron states; intraband optical transitions; iterative method; self-consistency; semiconductor quantum dot; spherical symmetry; transition matrix; wave function; Boundary conditions; Civil engineering; Effective mass; Gallium arsenide; Geometrical optics; Quantum dots; Quantum mechanics; Single electron devices; US Department of Transportation; Wave functions;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625201