A comparative study of CMOS & CNFET based current conveyor at 32nm technology node

Author

Imran, Ale ; Pable, S.D. ; Hasan, Mohd

Author_Institution

Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India

fYear

2010

fDate

17-19 Sept. 2010

Firstpage

276

Lastpage

281

Abstract

This paper presents for the first time the design and comparison of wide bandwidth high performance CMOS and CNFET realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. Until this date, almost all design efforts of CCII± have been directed towards micron range, and the designing aspects at nm range still needs to be explored. Voltage and Current bandwidths, port resistances along with power consumption have been the parameters for comparison. Simulations have been carried out using HSPICE simulator at a reduced power supply of ±0.8V.

Keywords

CMOS integrated circuits; SPICE; carbon nanotubes; current conveyors; field effect transistors; CMOS; CNFET; HSPICE simulator; carbon nanotube field effect transistor; current bandwidth; dual-output second generation current conveyor; power consumption; size 32 nm; voltage; CMOS integrated circuits; CNTFETs; Carbon nanotubes; Resistance; Semiconductor device modeling; Threshold voltage; CMOS; Carbon Nanotube Field Effect Transistor; Dual Output Current Conveyor; Singk Watt Carbon nano tube(SWCNT);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Technology (ICCCT), 2010 International Conference on

Conference_Location

Allahabad, Uttar Pradesh

Print_ISBN

978-1-4244-9033-2

Type

conf

DOI

10.1109/ICCCT.2010.5640518

Filename

5640518