Title :
Visible hot electron electroluminescence from Si in tunnel MIS junction
Author :
Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Light emission from Si in tunnel MIS structure has been investigated. Monoenergetic hot electrons which are capable of photon emission may appear in Si due to direct tunneling from the metal under high insulator bias conditions. The electroluminescence spectra measured in tunnel MIS structures are discussed
Keywords :
MIS structures; MOSFET; aluminium; electroluminescence; elemental semiconductors; hot carriers; silicon; silicon compounds; tunnelling; Al-SiO2-Si; direct tunneling; insulator bias conditions; monoenergetic hot electrons; photon emission; tunnel MIS junction; visible electroluminescence spectra; Current density; Current measurement; Current-voltage characteristics; Density measurement; Electrons; Insulation; Ionization; MOSFETs; Optical scattering; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625206
