Title :
Nucleation and crystallization behavior of MOD derived PZT thin film
Author :
Xiong, S.B. ; Wu, X.Q. ; Zhang, L.Y. ; Yao, X.
Author_Institution :
Electron. Mater. Res. Lab., Xi´´an Jiaotong Univ., China
Abstract :
Nucleation and crystallization behavior of PZT thin films are studied by XRD, SEM and isothermal DTA techniques. It is found experimentally that the perovskite crystal nucleation rate is much higher than the perovskite crystallites´ growth rate at the temperature of 460°C. The crystallization centers grow into grains through swallowing the surrounding amorphous substrate. Too large grains appear in thin films due to the number of perovskite nucleus with crystallites´ size greater than critical size is not enough. Dense, crack-free and perovskite PZT thin films with grain size of 0.3-0.6 μm were obtained by optimizing the heat treatment
Keywords :
X-ray diffraction; coating techniques; crystal growth from solution; crystallisation; crystallites; ferroelectric materials; ferroelectric thin films; grain growth; grain size; heat treatment; lead compounds; nucleation; piezoceramics; scanning electron microscopy; thermal analysis; 0.3 to 0.6 mum; 460 C; MOD derived PZT thin film; PZT; PbZrO3TiO3; SEM; XRD; amorphous substrate; critical size; crystallite growth rate; crystallization; crystallization centers; dense crack-free perovskite PZT thin films; grain size; heat treatment; isothermal DTA techniques; large grains; metallo-organic deposition; nucleation; perovskite crystal nucleation rate; Coatings; Crystallization; Isothermal processes; Organic compounds; Semiconductor films; Spinning; Temperature; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522424
