DocumentCode :
3160659
Title :
Deep sub-micron SRAM design for low leakage
Author :
Kumar, Sampath ; Singh, Sanjay Kr ; Noor, Arti ; Kaushik, B.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., J.S.S. Acad. of Tech. Educ., Noida, India
fYear :
2010
fDate :
17-19 Sept. 2010
Firstpage :
265
Lastpage :
269
Abstract :
This paper deals with the design opportunities of Static Random Access Memory (SRAM) for lower power consumption and propagation delay. Initially the existing SRAM architectures are investigated, and thereafter a suitable basic 6T SRAM structure is chosen. The key to low power dissipation in the SRAM data path is to reduce the signal swings on the highly capacitive nodes like the bit and data lines. While designing the SRAM, techniques such as circuit partitioning, divide word line and low power layout methodologies are reviewed to minimize the power dissipation.
Keywords :
SRAM chips; integrated circuit design; circuit partitioning; deep sub-micron SRAM design; divide word line; low power layout methodology; power dissipation; static random access memory; Circuit stability; Computer architecture; Inverters; Microprocessors; Noise; Random access memory; Transistors; DIBL; DRV; SNM; SOQCMOS; SRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer and Communication Technology (ICCCT), 2010 International Conference on
Conference_Location :
Allahabad, Uttar Pradesh
Print_ISBN :
978-1-4244-9033-2
Type :
conf
DOI :
10.1109/ICCCT.2010.5640520
Filename :
5640520
Link To Document :
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