• DocumentCode
    316066
  • Title

    Performances of low-voltage, low-power SOI CMOS technology

  • Author

    Colinge, Jean-Pierre

  • Author_Institution
    Microelectron. Lab., Univ. Catholique de Louvain, Belgium
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    229
  • Abstract
    Fully depleted SOI CMOS technology is now showing decisive advantages over bulk CMOS. Low-voltage, low-power SOI circuits operating at respectable speeds have been demonstrated. SOI MOSFETs can also operate at microwave frequencies under low supply voltage, low power dissipation, and low noise figure conditions making them devices of choice for portable communication systems
  • Keywords
    CMOS integrated circuits; field effect MMIC; integrated circuit noise; mobile radio; silicon-on-insulator; fully depleted technology; low-power SOI CMOS technology; microwave frequencies; noise figure; portable communication systems; power dissipation; CMOS technology; Capacitance; Coupling circuits; MOSFETs; Microwave frequencies; Power supplies; Random access memory; Threshold voltage; Transconductance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625225
  • Filename
    625225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=316066