Title :
Correlation between hot-electron light emission and currents in pseudomorphic HEMTs [AlGaAs-InGaAs-GaAs]
Author :
Cova, P. ; Fantini, F. ; Manfredi, M.
Author_Institution :
Dept. of Inf. & Technol., Parma Univ., Italy
Abstract :
In this paper we show a straight correlation between the integrated light emitted and the DC currents in pseudomorphic HEMTs biased at high drain voltage, where, due to hot electrons, impact ionization takes place. By means of electrical and optical measurements we have found three different recombination mechanisms originating the light emission in three different energy ranges
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; indium compounds; AlGaAs-InGaAs-GaAs; DC currents; energy ranges; high drain voltage bias; hot-electron light emission; impact ionization; pseudomorphic HEMTs; recombination mechanisms; Breakdown voltage; Electric variables measurement; Electron optics; Gallium arsenide; Impact ionization; Indium gallium arsenide; Leakage current; Noise figure; PHEMTs; Testing;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625227
