Influence of thermal phenomena on the RF behaviour of power heterojunction bipolar transistors and optimization

Author

Souverain, P. ; Cazarre, A. ; Camps, T. ; Faleh, M.S. ; Tasselli, J. ; Marty, A. ; Bailbé, J.P.

Author_Institution

Lab. d´´Analyse et d´´Archit. des Syst., CNRS, Toulouse, France

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

241

Abstract

The thermal resistance of power devices is determined by means of a 3D heat dissipation modeling. In particular, we have evaluated the thermal resistance of Heterojunction Bipolar Transistors (HBTs) in which GaAs substrate is replaced by a substrate exhibiting a higher thermal conductivity like Diamond, Aluminium Nitride or Silicon. Thus, through use of the electrothermal model we can predict an increase of about 50 percent of the RF power at 10 GHz and at the compression point when the power device is transferred onto a diamond substrate. The different techniques we are performing to transfer the HBT active layers onto host substrates are described

Keywords

UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; thermal resistance; 3D heat dissipation modeling; AlN; C; RF behaviour; RF power; Si; active layers; compression point; heterojunction bipolar transistors; optimization; power heterojunction bipolar transistors; thermal conductivity; thermal phenomena; thermal resistance; Conductivity; Electrothermal effects; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Silicon; Surface resistance; Temperature distribution; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625228

Filename

625228