DocumentCode :
316071
Title :
Comparison of main models for generation-recombination space-charge current in abrupt p-n junction
Author :
Gaci, A. ; Maxim, A. ; Ahmadpanah, M. ; Andreu, D. ; Boucher, J.
Author_Institution :
Lab. d´´Electron., ENSEEIHT, Toulouse, France
Volume :
1
fYear :
1997
fDate :
14-17 Sep 1997
Firstpage :
253
Abstract :
The principal approaches of modelling the generation-recombination current in the space-charge region are compared in the case of an abrupt p-n junction submitted to small bias voltages. It is shown that it is possible to model this parameter without any need to know the x-variation of the potential in the space-charge region. The results obtained by our model are in good agreement with those of the “exact model”
Keywords :
electron-hole recombination; p-n junctions; space charge; abrupt p-n junction; generation-recombination space-charge current; model; Charge carrier processes; Current density; Equations; Kinetic theory; P-n junctions; Radiative recombination; Silicon; Spontaneous emission; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
Type :
conf
DOI :
10.1109/ICMEL.1997.625235
Filename :
625235
Link To Document :
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