Title :
Non-quasi-static modeling of bipolar transistors for CAD applications
Author_Institution :
Dipt. di Ingegneria Elettronica, Naples Univ., Italy
Abstract :
A general analytical treatment of small-signal operation of bipolar transistors is presented, which applies to nonuniformly doped devices and arbitrary injection levels. The analysis provides a systematic method for deriving all previous small-signal models, as well as new models. Comparison between different models is also presented, and the impact of high-injection effects on device performance is discussed
Keywords :
CAD; bipolar transistors; electronic engineering computing; semiconductor device models; CAD applications; arbitrary injection levels; bipolar transistors; device performance; high-injection effects; non-quasi-static modeling; nonuniformly doped devices; small-signal operation; Bipolar transistors; Councils; Doping profiles; Electron mobility; Equations; Microelectronics; Performance analysis; Semiconductor process modeling; Signal analysis; Steady-state;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625238
