DocumentCode :
316073
Title :
Investigation of MOSFET operation in bipolar mode
Author :
Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N. ; Abramov, V.V.
Author_Institution :
Eng. Phys. Inst., Acad. of Sci., Moscow, Russia
Volume :
1
fYear :
1997
fDate :
14-17 Sep 1997
Firstpage :
273
Abstract :
The authors are concerned with the properties of a conventional MOSFET in the bipolar mode of operation. They show that the base current can provide useful information about interface trap density at the Si-SiO2 interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits
Keywords :
MOSFET; electron traps; hole traps; interface states; semiconductor-insulator boundaries; surface recombination; MOSFET operation; Si-SiO2; Si-SiO2 interface; bipolar mode operation; interface trap density; Bipolar transistors; Doping; Logic design; Logic devices; MOSFET circuits; Microelectronics; Parameter extraction; Physics; Power MOSFET; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
Type :
conf
DOI :
10.1109/ICMEL.1997.625243
Filename :
625243
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316073
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