Title :
On the extraction of the effective channel length of MOSFETs
Author :
Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J. ; Sánchez, F. J García
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs is investigated using results from a two-dimensional device simulator. It is found that the effective channel length obtained from the capacitance-based method is much smaller than those obtained from the current-voltage methods and that discrepancy results from inconsistencies imbedded in the development of the C-V method
Keywords :
MOSFET; capacitance; semiconductor device models; 2D device simulator; C-V method; MOSFETs; capacitance-based method; effective channel length extraction; Capacitance measurement; Capacitance-voltage characteristics; Computer aided instruction; Current measurement; Density measurement; Electric variables; Electrical resistance measurement; Length measurement; MOSFETs; Voltage control;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625248
