DocumentCode
316076
Title
On the extraction of the threshold voltage of MOSFETs
Author
Ortiz-Conde, A. ; Fernandes, E. Couveia ; Liou, J.J. ; Hassan, Md Rofiqul ; Sánchez, F. J García ; De Mercato, G. ; Wong, W. ; Castillo, O. Montilla
Author_Institution
Dept. de Electron., Simon Bolivar Univ., Caracas, Venezuela
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
285
Abstract
A new method to extract the threshold voltage and the effective channel of MOSFETs, which is insensitive to the series resistances, is presented. This method, which is weakly dependent on the mobility model, is tested in circuit simulator and measurement environments
Keywords
MOSFET; electric potential; semiconductor device models; MOSFETs; effective channel extraction; mobility model; threshold voltage extraction; Circuit simulation; Current measurement; Educational institutions; Electrical resistance measurement; Low pass filters; MOSFETs; Measurement errors; Threshold voltage; Time division multiplexing; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625250
Filename
625250
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