Title :
Method for series resistance extraction using the saturation region of MOSFETs
Author :
Popescu, A.E. ; Rusu, A. ; Steriu, D. ; Chovet, A. ; Ionescu, A.M.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A new and simple extraction method for source series resistance and mobility reduction coefficient with the gate transverse field, based on the MOSFET transconductance modeling in the saturation region, is reported. The proposed procedure is validated on partially depleted SIMOX MOSFETs
Keywords :
MOSFET; SIMOX; carrier mobility; electric resistance; equivalent circuits; semiconductor device models; MOSFETs; Si; gate transverse field; mobility reduction coefficient; partially depleted SIMOX devices; saturation region; series resistance extraction; source series resistance; transconductance modeling; Analytical models; Electrical resistance measurement; Linear predictive coding; MOSFET circuits; Parameter extraction; Semiconductor films; Substrates; Transconductance; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625251
