Title :
Switching characteristics and static parameter extraction in PD SOI MOSFET´s
Author :
Perron, L. ; Hamaguchi, C. ; Lacaita, A. ; Maegawa, S. ; Yamaguchi, Yoshio
Author_Institution :
Dipt. di Eletron. e Inf., Politecnico di Milano, Italy
Abstract :
In switching operation the drain current delivered by partially depleted (PD) SOI MOSFETs in the floating body configuration differs from the DC values. We report the measured transients of the drain current within and below the kink region, discussing their dependence on the device bias. We assess their impact on the extraction of the static parameters, showing hysteresis in the low VDS region of the DC characteristics
Keywords :
MOSFET; electric current; hysteresis; impact ionisation; power system transients; silicon-on-insulator; switching; DC characteristics; device bias; drain current; floating body configuration; hysteresis; kink region; partially depleted SOI MOSFET; static parameter extraction; switching characteristics; transients; Current measurement; Hysteresis; Impact ionization; Intrusion detection; MOSFETs; Parameter extraction; Shape; Switches; Ultra large scale integration; Virtual colonoscopy;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625254
