• DocumentCode
    316078
  • Title

    Switching characteristics and static parameter extraction in PD SOI MOSFET´s

  • Author

    Perron, L. ; Hamaguchi, C. ; Lacaita, A. ; Maegawa, S. ; Yamaguchi, Yoshio

  • Author_Institution
    Dipt. di Eletron. e Inf., Politecnico di Milano, Italy
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    293
  • Abstract
    In switching operation the drain current delivered by partially depleted (PD) SOI MOSFETs in the floating body configuration differs from the DC values. We report the measured transients of the drain current within and below the kink region, discussing their dependence on the device bias. We assess their impact on the extraction of the static parameters, showing hysteresis in the low VDS region of the DC characteristics
  • Keywords
    MOSFET; electric current; hysteresis; impact ionisation; power system transients; silicon-on-insulator; switching; DC characteristics; device bias; drain current; floating body configuration; hysteresis; kink region; partially depleted SOI MOSFET; static parameter extraction; switching characteristics; transients; Current measurement; Hysteresis; Impact ionization; Intrusion detection; MOSFETs; Parameter extraction; Shape; Switches; Ultra large scale integration; Virtual colonoscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625254
  • Filename
    625254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=316078