Title :
Extremely radiation stable rectifiers and photovoltaic converters based at thin-film heterojunctions of intrinsic semiconductors
Author :
Volovichev, I.N. ; Gurevich, Yu.G. ; Koshkin, V.M.
Author_Institution :
Inst. for Radiophys. & Electron., Ukraine
Abstract :
The nonlinear charge carriers transport had been investigated at the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductors (i-i) structures. It is shown that if the film thickness is of order of Debye screening radius, the current-voltage characteristics of the structures mentioned become comparable to those observed for the usual junctions based on doped semiconductors
Keywords :
convertors; metal-semiconductor-metal structures; photodetectors; radiation hardening (electronics); semiconductor heterojunctions; semiconductor-metal boundaries; solid-state rectifiers; Debye screening radius; current-voltage characteristics; film thickness; intrinsic semiconductor heterojunction structures; intrinsic semiconductors; metal-intrinsic semiconductor-metal junctions; nonlinear charge carriers transport; radiation stable photovoltaic converters; radiation stable rectifiers; thin-film heterojunctions; Charge carriers; Heterojunctions; Ionizing radiation; Photovoltaic systems; Rectifiers; Semiconductor films; Semiconductor materials; Semiconductor thin films; Solar power generation; Transistors;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625261
