Title :
Optimization of base doping profile for minimum transit time in bipolar transistors
Author :
Rinaldi, P.G. ; Rinaldi, N.F.
Author_Institution :
Dipt. di Ingegneria Elettronica, Naples Univ., Italy
Abstract :
In this paper we present an analytical solution to the problem of finding the optimum base doping profile which minimises the transit time for fixed values of the doping concentration at the base edges. The optimum profile is described by simple expressions which show its dependence upon physical and technological parameters
Keywords :
bipolar transistors; doping profiles; optimisation; base doping profile optimisation; base edges; bipolar transistors; doping concentration; minimum transit time; Annealing; Bipolar transistors; Calculus; Delay effects; Doping profiles; Epitaxial growth; Guidelines; Implants; Ion implantation; Temperature;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625267
