Title :
An analytical continuous model of a fully depleted SOI MOSFET applicable for CAD
Author :
Jurczak, M. ; Jakubowski, A.
Abstract :
This paper describes a new continuous analytical model of fully depleted SOI MOSFET valid for the whole range of bias conditions. The physical descriptions of the subthreshold and the above threshold regions are joined together by an empirical function which describes the moderate inversion region
Keywords :
CAD; MOSFET; electronic engineering computing; inversion layers; semiconductor device models; silicon-on-insulator; CAD application; Si; above threshold region; analytical continuous model; bias condition; empirical function; fully depleted SOI MOSFET; moderate inversion region; subthreshold region; Analytical models; Capacitance; Circuit simulation; Computational modeling; Ink; MOSFET circuits; Region 3; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625270
