Title :
Influence of the temperature on the equivalent noise resistance of HEMT´s at microwave frequencies
Author :
Prima, F. Ni ; Caddemi, A. ; Sannino, M.
Author_Institution :
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
This paper is focused on the performance of the noise resistance R n of HEMT´s at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of Rn
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; sensitivity analysis; HEMT; U-shaped behavior; electrical elements; equivalent circuit; equivalent noise resistance; low-noise devices; microwave frequencies; noisy circuit models; scattering parameters; sensitivity analysis; temperature dependence; Acoustic reflection; Circuit noise; HEMTs; Microwave frequencies; Noise figure; Noise shaping; PHEMTs; Scattering parameters; Sensitivity analysis; Temperature sensors;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625272
