DocumentCode :
3160926
Title :
A low LO power V-band Gilbert-cell down-conversion mixer using 90 nm CMOS technology
Author :
Min-Li Chou ; Fan-Hsiu Huang ; Hsien-Chin Chiu
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2013
fDate :
26-28 Oct. 2013
Firstpage :
184
Lastpage :
186
Abstract :
A Gilbert cell down conversion mixer using TSMC 90 nm CMOS technology is proposed in this manuscript, which is operated with low LO power to drive switching stage for V-band system applications. The broadband Marchand baluns providing a single-to-differential signal transformation to RF and LO ports are arranged around the mixer core for size reduction. The mixer has the highest conversion gain of 0.35 dB at LO power of -8.65 dBm. The total chip area including Marchand baluns is 0.77 × 0.80 mm2.
Keywords :
CMOS analogue integrated circuits; baluns; field effect MIMIC; low-power electronics; millimetre wave mixers; Gilbert-cell down-conversion mixer; TSMC CMOS technology; V-band mixer; broadband Marchand baluns; low LO power mixer; mixer core; single-to-differential signal transformation; size 90 nm; switching stage; CMOS integrated circuits; Frequency measurement; Gain; Mixers; Ports (Computers); Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Problem-solving (ICCP), 2013 International Conference on
Conference_Location :
Jiuzhai
Type :
conf
DOI :
10.1109/ICCPS.2013.6893515
Filename :
6893515
Link To Document :
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