Title :
A gain boosting switch for S/H circuit using clock boosting and symmetrical techniques to decrease the effect of channel charge injection
Author :
Zhou Zhao ; Mingzheng Wang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new gain boosting switch using for bottom-plate sampling in the S/H circuit that enables increasing the accuracy of S/H circuit is proposed. A new method using symmetry and clock boosting techniques to remove the asymmetrical channel charge injection is also presented. Implemented in a 0.18μm CMOS process, the switch achieves ±0.3mV deviation and 924ps delay when a 5MHz square wave is sampled at 100Ms/s. The equivalent resistance ranges 4.2Ω to 7.5Ω and entire switch consumes 1.9μW at 1.8V supply when a 45MHz rail-to-rail sine wave is sampled at 100Ms/s. Particularly test results show that this new switch could be used in 10 bit, 100Ms/s pipeline ADCs.
Keywords :
CMOS integrated circuits; analogue-digital conversion; clocks; sample and hold circuits; CMOS process; S-H circuit; asymmetrical channel charge injection; bottom-plate sampling; clock boosting; frequency 45 MHz; frequency 5 MHz; gain boosting switch; pipeline ADC; power 1.9 muW; rail-to-rail sine wave; resistance 4.2 ohm to 7.5 ohm; size 0.18 mum; symmetrical techniques; symmetry boosting; time 924 ps; voltage 1.8 V; Boosting; Capacitors; Clocks; Pipelines; Resistance; Switches; Switching circuits; Sample/hold circuit; analog-to digital converter (ADC); bottom-plate sampling; charge injection effect; clock boosting; gain boosting; switch capacitor; symmetrical circuit;
Conference_Titel :
Computational Problem-solving (ICCP), 2013 International Conference on
Conference_Location :
Jiuzhai
DOI :
10.1109/ICCPS.2013.6893517