Title :
A 850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
Author :
Aniktar, Huseyin ; Sjoland, Henrik ; Mikkelsen, Jan H. ; Larsen, Torben
Author_Institution :
Dept. of Commun. Technol., Aalborg Univ., Aalborg East
Abstract :
This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively
Keywords :
CMOS integrated circuits; integrated circuit layout; microwave power amplifiers; radiofrequency amplifiers; 0.25 micron; 1800 MHz; 1900 MHz; 850 MHz; 900 MHz; CMOS medium power amplifier; RF power amplifier; compression point; quad band; Driver circuits; Fingers; GSM; Integrated circuit interconnections; Linearity; Microwave amplifiers; Multiaccess communication; Power amplifiers; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281359
