Title :
A Fully Integrated Broadband Power Amplifier with Two-dimensional Linearization
Author :
Lu, Chao ; Pham, Anh-Vu ; Shaw, Michael ; Saint, Christopher
Author_Institution :
Dept. of Elect. & Comp. Eng., California Univ., Davis, CA
Abstract :
The paper presents the design of a broadband amplifier with two-dimensional linearization. The amplifier features high efficiency and linearity, wide bandwidth, and full integration in 180-nm RF CMOS technology. The experimental results demonstrate that the amplifier achieves a measured 3-dB bandwidth of 3.7 to 8.8 GHz, and a gain of 8.24 dB. The amplifier draws only 55 mA DC current from a 2.8 V power supply. The third-order intermodulation (IM3) is improved by about 11-dB. The measured output power at 1dB compression point (P1dB) and saturation power (Psat) are 15.6 dBm and 19 dBm, respectively. The peak power-added efficiency (PAE) is measured to be 25%, which is the highest efficiency reported for broadband CMOS power amplifiers
Keywords :
CMOS integrated circuits; intermodulation; linearisation techniques; microwave power amplifiers; 180 nm; 2.8 V; 2D linearization; 3.7 to 8.8 GHz; 8.24 dB; broadband CMOS power amplifiers; integrated broadband power amplifier; radiofrequency CMOS technology; third-order intermodulation; Bandwidth; Broadband amplifiers; CMOS technology; Gain measurement; Linearity; Power amplifiers; Power measurement; Power supplies; Radio frequency; Radiofrequency amplifiers; CMOS RF ICs; distributed amplifiers; linearization techniques; power amplifiers;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281360
