Title :
A Load Modulated High Efficiency Power Amplifier
Author :
Lepine, Fabien ; Jos, Rik ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Abstract :
A load modulation technique based on a high efficiency inverse class-F power amplifier (PA) has been developed at 1 GHz. The active device is an LDMOS transistor. The PA provides a drain efficiency greater than 60 % over a 5 dB output power range with a maximum output power of 41.6 dBm
Keywords :
MOSFET; UHF power amplifiers; varactors; 1 GHz; LDMOS transistor; active device; inverse class-F power amplifier; load modulated high efficiency power amplifier; load modulation technique; varactor; Circuits; High power amplifiers; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Regulators; Silicon carbide; Varactors; Voltage; Class-F; PA; high efficiency; load modulation; varactor;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281361
