A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier

Author

Comeau, Jonathan P. ; Andrews, Joel M. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

419

Lastpage

422

Abstract

A monolithic 24 GHz SiGe HBT power amplifier (PA), with an output 1 dB compression point of 20 dBm, is presented. The circuit is biased from a 5.1 V supply in a class AB mode of operation, resulting in a power added efficiency (PAE) of 14 % at the 1 dB compression point. The SiGe PA has a small-signal gain of 12 dB at 24 GHz, and a return loss of 9.6 dB and 16 dB at the input and output ports, respectively. This SiGe PA leverages the increased voltage swing capabilities associated with the common-emitter / common-base configuration for SiGe HBTs incorporated in a cascode architecture

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; monolithic integrated circuits; 24 GHz; 5.1 V; 9.6 dB; HBT power amplifier; SiGe; cascode architecture; common-base; common-emitter; monolithic power amplifier; power added efficiency; BiCMOS integrated circuits; CMOS technology; Circuit topology; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave amplifiers; Power amplifiers; Power generation; Silicon germanium; Voltage; PA; Power Amplifier; SiGe HBT; Silicon-Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281363

Filename

4057839