Single step rapid thermal diffusion for selective emitter formation and selective oxidation

Author

Schindler, R. ; Breymesser, A. ; Lautenschlager, H. ; Marckmann, C. ; Noël, S. ; Schubert, U.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany

fYear

1996

fDate

13-17 May 1996

Firstpage

509

Lastpage

512

Abstract

A novel method of forming selective emitters for Si solar cells is presented. Using spectral selection of the light used in rapid thermal processing (RTP), diffusion profiles can be tailored to variations desired in sheet resistance of emitters. Sheet resistance topography, secondary ion mass spectroscopy, reoxidation and minority carrier lifetime are discussed

Keywords

carrier lifetime; electric resistance; elemental semiconductors; mass spectroscopy; minority carriers; oxidation; rapid thermal processing; secondary ion mass spectroscopy; silicon; solar cells; thermal diffusion; Si; Si solar cells; diffusion profiles; minority carrier lifetime measurements; rapid thermal diffusion; rapid thermal processing; reoxidation; secondary ion mass spectroscopy; selective emitter formation; selective oxidation; sheet resistance topography; spectral selection; Charge carrier processes; Conductivity; Diffusion processes; Furnaces; Performance analysis; Probes; Shape; Surface topography; Tail; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564055

Filename

564055