Title :
Single step rapid thermal diffusion for selective emitter formation and selective oxidation
Author :
Schindler, R. ; Breymesser, A. ; Lautenschlager, H. ; Marckmann, C. ; Noël, S. ; Schubert, U.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
Abstract :
A novel method of forming selective emitters for Si solar cells is presented. Using spectral selection of the light used in rapid thermal processing (RTP), diffusion profiles can be tailored to variations desired in sheet resistance of emitters. Sheet resistance topography, secondary ion mass spectroscopy, reoxidation and minority carrier lifetime are discussed
Keywords :
carrier lifetime; electric resistance; elemental semiconductors; mass spectroscopy; minority carriers; oxidation; rapid thermal processing; secondary ion mass spectroscopy; silicon; solar cells; thermal diffusion; Si; Si solar cells; diffusion profiles; minority carrier lifetime measurements; rapid thermal diffusion; rapid thermal processing; reoxidation; secondary ion mass spectroscopy; selective emitter formation; selective oxidation; sheet resistance topography; spectral selection; Charge carrier processes; Conductivity; Diffusion processes; Furnaces; Performance analysis; Probes; Shape; Surface topography; Tail; Temperature dependence;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564055
