A MOSFET resonant synchronous rectifier for high-frequency DC/DC converters

Author

Tabisz, Wojciech A. ; Lee, Fred C. ; Chen, Dan Y.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

1990

fDate

0-0 1990

Firstpage

769

Lastpage

779

Abstract

A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<>

Keywords

field effect transistor circuits; losses; power convertors; solid-state rectifiers; HF DC/DC convertors; MOSFET resonant synchronous rectifier; PWM synchronous rectifier; Schottky diode rectifier; conduction losses; gate-drive switching losses; parasitic capacitances; power loss; pulse width modulation; MOSFET circuits; Parasitic capacitance; Power MOSFET; Pulse width modulation; RLC circuits; Rectifiers; Resonance; Schottky diodes; Switching frequency; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE

Conference_Location

San Antonio, TX, USA

Type

conf

DOI

10.1109/PESC.1990.131267

Filename

131267