Title :
A MOSFET resonant synchronous rectifier for high-frequency DC/DC converters
Author :
Tabisz, Wojciech A. ; Lee, Fred C. ; Chen, Dan Y.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<>
Keywords :
field effect transistor circuits; losses; power convertors; solid-state rectifiers; HF DC/DC convertors; MOSFET resonant synchronous rectifier; PWM synchronous rectifier; Schottky diode rectifier; conduction losses; gate-drive switching losses; parasitic capacitances; power loss; pulse width modulation; MOSFET circuits; Parasitic capacitance; Power MOSFET; Pulse width modulation; RLC circuits; Rectifiers; Resonance; Schottky diodes; Switching frequency; Switching loss;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131267
