Improved geometry of heavily diffused emitters in high-efficiency silicon solar cells

Author

Ohtsuka, H. ; Muramatsu, S. ; Nagata, Y. ; Sakamoto, M. ; Tsutsui, K. ; Uematsu, T. ; Warabisako, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

517

Lastpage

520

Abstract

An equation has been formulated for calculating the power loss in two-dimensional (2-D) emitters in solar cells with dot contacts and used to evaluate the current crowding that occurs in 2-D geometry. Based on this evaluation, a solar cell structure is proposed that uses line-shaped heavily diffused emitters under dot contacts, in contrast to the cell structure adopted by the University of New South Wales Group, which has dot-shaped heavily diffused emitters under dot contacts. The effectiveness of the proposed emitter geometry was verified by both calculation and measurement

Keywords

diffusion; elemental semiconductors; losses; silicon; solar cells; Si; current crowding; dot contacts; heavily diffused emitters; high-efficiency silicon solar cells; line-shaped heavily diffused emitters; power loss calculation; solar cell structure; solar cells; two-dimensional emitters; Contact resistance; Electrodes; Equations; Fingers; Geometry; Photovoltaic cells; Power engineering and energy; Proximity effect; Silicon; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564057

Filename

564057