DocumentCode :
3161494
Title :
Improved geometry of heavily diffused emitters in high-efficiency silicon solar cells
Author :
Ohtsuka, H. ; Muramatsu, S. ; Nagata, Y. ; Sakamoto, M. ; Tsutsui, K. ; Uematsu, T. ; Warabisako, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
517
Lastpage :
520
Abstract :
An equation has been formulated for calculating the power loss in two-dimensional (2-D) emitters in solar cells with dot contacts and used to evaluate the current crowding that occurs in 2-D geometry. Based on this evaluation, a solar cell structure is proposed that uses line-shaped heavily diffused emitters under dot contacts, in contrast to the cell structure adopted by the University of New South Wales Group, which has dot-shaped heavily diffused emitters under dot contacts. The effectiveness of the proposed emitter geometry was verified by both calculation and measurement
Keywords :
diffusion; elemental semiconductors; losses; silicon; solar cells; Si; current crowding; dot contacts; heavily diffused emitters; high-efficiency silicon solar cells; line-shaped heavily diffused emitters; power loss calculation; solar cell structure; solar cells; two-dimensional emitters; Contact resistance; Electrodes; Equations; Fingers; Geometry; Photovoltaic cells; Power engineering and energy; Proximity effect; Silicon; Two dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564057
Filename :
564057
Link To Document :
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