Novel method for failure prognostics of power MOSFET

Switched mode power supplies have become ubiquitous in electronic modules and systems. From converting power types, power levels, or driving actuators, these power converters embody varying topologies but usually have high switching rates of up to 500 kHz, power devices such as MOSFETs, microelectronic components and a mix of passive components that store and release energy. They are complex modules that have an unfortunate history of observed high failure rates, yet they may be required to support critical systems. MOSFET plays an increasingly important role in energy conversion and application, it is also the weakest link in the SMPS systems, so that power MOSFET could be used for prognostics of the SMPS. In this paper, a novel method for prognosis of power MOSFET is introduced with the measurement of the timing delay between the Gate-Source and Drain-Source, the time delay will increase with the usage of power MOSFET, as the threshold voltage shifts, also the capacitor of the gate-source increase, which could be measured with the proposed method, the prognostics of MOSFET could be easily implemented.