A High-Linearity Tapered Distributed Amplifier for Ultra-Wideband-Applications

Author

Sewiolo, Benjamin ; Fischer, Georg ; Weigel, Robert

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen

fYear

2009

fDate

16-18 March 2009

Firstpage

1

Lastpage

4

Abstract

In this paper the analysis, design and characterization of a 12 GHz high-linearity distributed amplifier for ultra-wideband applications are presented. The amplifier is fabricated in a low-cost 0.25 mum SiGe BiCMOS technology. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line. The collector line has been tapered for efficiency improvement. 12 dBm output power have been measured at the 1-dB compression point (P_1dB) in the desired frequency range with an associated gain of 11 dB and a gain flatness of plusmn1 dB. The power dissipation of the amplifier is 132 mW from a 3.3 V supply. The chip size is 1.69 mm². Good agreement between simulation and measurement have been achieved.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; ultra wideband technology; wideband amplifiers; BiCMOS technology; GeSi; cascode gain cells; chip size; collector line; compression point; frequency 12 GHz; high-linearity tapered distributed amplifier; output power; size 0.25 mum; ultrawideband-applications; voltage 3.3 V; BiCMOS integrated circuits; Coupling circuits; Distributed amplifiers; Gain; Germanium silicon alloys; Power amplifiers; Power generation; Semiconductor device measurement; Silicon germanium; Ultra wideband technology; BiCMOS; SiGe; Ultra-Wideband; distributed amplifier; high linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009 German

Conference_Location

Munich

Print_ISBN

978-3-9812668-0-1

Electronic_ISBN

978-3-8007-3150-3

Type

conf

DOI

10.1109/GEMIC.2009.4815853

Filename

4815853