Title :
A High-Linearity Tapered Distributed Amplifier for Ultra-Wideband-Applications
Author :
Sewiolo, Benjamin ; Fischer, Georg ; Weigel, Robert
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen
Abstract :
In this paper the analysis, design and characterization of a 12 GHz high-linearity distributed amplifier for ultra-wideband applications are presented. The amplifier is fabricated in a low-cost 0.25 mum SiGe BiCMOS technology. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line. The collector line has been tapered for efficiency improvement. 12 dBm output power have been measured at the 1-dB compression point (P1dB) in the desired frequency range with an associated gain of 11 dB and a gain flatness of plusmn1 dB. The power dissipation of the amplifier is 132 mW from a 3.3 V supply. The chip size is 1.69 mm2. Good agreement between simulation and measurement have been achieved.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; ultra wideband technology; wideband amplifiers; BiCMOS technology; GeSi; cascode gain cells; chip size; collector line; compression point; frequency 12 GHz; high-linearity tapered distributed amplifier; output power; size 0.25 mum; ultrawideband-applications; voltage 3.3 V; BiCMOS integrated circuits; Coupling circuits; Distributed amplifiers; Gain; Germanium silicon alloys; Power amplifiers; Power generation; Semiconductor device measurement; Silicon germanium; Ultra wideband technology; BiCMOS; SiGe; Ultra-Wideband; distributed amplifier; high linearity;
Conference_Titel :
Microwave Conference, 2009 German
Conference_Location :
Munich
Print_ISBN :
978-3-9812668-0-1
Electronic_ISBN :
978-3-8007-3150-3
DOI :
10.1109/GEMIC.2009.4815853
