0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM

Author

Sakamoto, Toshitsugu ; Tsuji, Yukihide ; Tada, Munehiro ; Makiyama, Hideki ; Hasegawa, Takumi ; Yamamoto, Yoshiki ; Okanishi, Shinobu ; Maekawa, Keiichi ; Banno, Naoki ; Miyamura, Makoto ; Okamoto, Koichiro ; Iguchi, Noriyuki ; Ogasahara, Yasuhiro ; Oda,

Author_Institution

Low Power Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2015

fDate

13-15 April 2015

Firstpage

1

Lastpage

3

Abstract

We present an ultra-low-power Microcontroller Unit (MCU) with an embedded atom switch ROM, which performs a 0.33-1.2 V operation voltage and 46.8-μA/MHz active current (or 18.26-μW/MHz active power). The MCU is fabricated by the hybrid of Silicon-On-Thin-Buried-oxide (SOTB) CMOS and bulk CMOS [1]. The SOTB CMOS with a body-bias voltage control realizes a high drivability up to 40-MHz operation at 0.54 V and small sleep power (0.628 μW), simultaneously.

Keywords

CMOS memory circuits; low-power electronics; microcontrollers; silicon-on-insulator; MCU; SOTB CMOS microcontroller; active current; active power; body-bias voltage control; bulk CMOS; embedded atom switch ROM; high drivability; read-only memory; silicon-on-thin-buried-oxide CMOS; ultra-low-power microcontroller unit; voltage 0.39 V; CMOS integrated circuits; Power demand; Random access memory; Read only memory; Switches; Switching circuits; Transistors; Atom switch; MCU; SOI;

fLanguage

English

Publisher

ieee

Conference_Titel

Low-Power and High-Speed Chips (COOL CHIPS XVIII), 2015 IEEE Symposium in

Conference_Location

Yokohama

Type

conf

DOI

10.1109/CoolChips.2015.7158658

Filename

7158658