Simulation study of an X-ray lithography cell: background and objectives

Author

White, K. Preston ; Trybula, Walter J.

Author_Institution

Dept. of Syst. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

1

fYear

1997

fDate

12-15 Oct 1997

Firstpage

444

Abstract

The next generation of semiconductor devices will realize integrated circuits with critical dimensions on the order of 0.18 microns. Achieving these small geometries presents a host of challenges to semiconductor manufacturers. In this paper, we describe a research project to investigate the potential effects on volume manufacturing operations and productivity resulting from the introduction of X-ray proximity lithography employing a synchrotron radiation source. The goal is to develop the operational modeling, simulation, and analysis tools required to evaluate, schedule and optimize the performance of X-ray lithography cells based on quantitative measures of manufacturing productivity

Keywords

X-ray lithography; digital simulation; electronic engineering; electronic engineering computing; integrated circuit manufacture; production engineering computing; semiconductor process modelling; 0.18 mum; X-ray lithography cell; X-ray proximity lithography; analysis tools; integrated circuits; operational modeling; semiconductor devices; semiconductor manufacturers; simulation tools; synchrotron radiation source; volume manufacturing operations; Analytical models; Circuit simulation; Geometry; Performance analysis; Productivity; Pulp manufacturing; Semiconductor device manufacture; Semiconductor devices; Synchrotron radiation; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Man, and Cybernetics, 1997. Computational Cybernetics and Simulation., 1997 IEEE International Conference on

Conference_Location

Orlando, FL

ISSN

1062-922X

Print_ISBN

0-7803-4053-1

Type

conf

DOI

10.1109/ICSMC.1997.625790

Filename

625790