DocumentCode :
3162005
Title :
Impact of lightning impulse voltage on polycrystalline silicon photovoltaic modules
Author :
Taosha Jiang ; Grzybowski, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Mississippi State Univ., Starkville, MS, USA
fYear :
2013
fDate :
7-11 Oct. 2013
Firstpage :
287
Lastpage :
290
Abstract :
Lightning is one of the factors that cause Photovoltaic (PV) system to fail. Both direct lightning strike and lightning induced voltages pose electrical stress to the PV system. The PV modules inside PV systems, like any other electric equipment, will be degraded under this stress. In this paper, experiments of applying standard lightning impulse voltages 1.2/50 μs of positive polarity (peak voltage 15 V, 30 V, and 90 V) on a type of polycrystalline silicon photovoltaic module were performed. Comparisons of their dark I-V characteristics curves and I-V characteristics are presented. Studies show that the repeated impulse stresses causes a drop in the modules power output when the stress voltage is 30 V and 90 V.
Keywords :
elemental semiconductors; lightning protection; photovoltaic power systems; silicon; solar cells; PV system; direct lightning strike; electric equipment; electrical stress; impulse stress; lightning impulse voltage; lightning induced voltage; polycrystalline silicon photovoltaic module; Current measurement; Lightning; Photovoltaic systems; Resistance; Semiconductor device measurement; Testing; Voltage measurement; electrical degradation; induced overvoltage; lightning impulse; photovoltaic modules;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lightning Protection (XII SIPDA), 2013 International Symposium on
Conference_Location :
Belo Horizonte
Print_ISBN :
978-1-4799-1343-5
Type :
conf
DOI :
10.1109/SIPDA.2013.6729225
Filename :
6729225
Link To Document :
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