Title :
Conduction processes in silicon solar cells
Author :
Kaminski, A. ; Marchand, J.J. ; El Omari, H. ; Laugier, A. ; Le, Q.N. ; Sarti, D.
Author_Institution :
Lab. de Phys. de la Matiere, Inst. National des Sci. Appliquees, Villeurbanne, France
Abstract :
Dark I-V experiments have been performed on directional solidification (DS), Czochralski (CZ) and cold crucible casting (CCC) silicon solar cells. Series and shunt resistances, ideality factors and saturation currents have been determined. However the usual equations (recombination and diffusion current) cannot fit some cells maybe because they are too approximated or because other mechanisms are present. The aim of this work is to explain the mechanisms occurring in these cells and to correlate them with the device characteristics. We show that for some solar cells we must add to the usual two exponential model (diffusion and recombination) trap assisted tunneling current and field assisted recombination. The influence of the material on these currents has also been investigated
Keywords :
casting; dark conductivity; directional solidification; electric resistance; electron-hole recombination; elemental semiconductors; semiconductor materials; silicon; solar cells; tunnelling; Czochralski Si solar cells; Si; cold crucible casting Si solar cells; conduction processes; dark I-V experiments; device characteristics; diffusion current; directional solidification Si solar cells; field assisted recombination; ideality factors; recombination; saturation currents; series resistances; shunt resistances; silicon solar cells; trap assisted tunneling current; two exponential model; Circuits; Dark current; Equations; Photovoltaic cells; Silicon; Space charge; Temperature; Thyristors; Tunneling; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564071
