Novel monolithic VCSEL devices for datacom applications

Author

Steinle, G. ; Wolf, H.D. ; Popp, M. ; Egorov, A.Yu. ; Kristen, G. ; Riechert, H.

Author_Institution

COM FO E OEC/Corp. Res. Photonics, Infineon Technol., Munich, Germany

fYear

2001

fDate

2001

Firstpage

218

Lastpage

222

Abstract

We present novel monolithic VCSEL devices for 850 nm and 1300 nm emission wavelength. First we introduce a simple theory to calculate an intracavity QW-monitordiode monolithically integrated within a standard 850 nm VCSEL structure including the responsivity to spontaneous emission. Calculations and experimental results for devices are compared, which are optimized for temperature insensitive responsivities. Then we present new monolithic 1300 nm VCSELs with improved performance. With MBE grown devices having an InGaAsN active region we achieved 1 mW cw-power at room-temperature at a wavelength above 1.3 μm

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical communication equipment; photodiodes; quantum well lasers; spontaneous emission; surface emitting lasers; 1 mW; 1300 nm; 850 nm; InGaAsN; InGaAsN active layer; MBE growth; VCSEL device; data communication; intracavity quantum well monitor diode; monolithic integration; spontaneous emission; Gallium arsenide; Monitoring; Optical arrays; Optical fiber communication; Optical surface waves; Optical transmitters; Spontaneous emission; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2001. Proceedings., 51st

Conference_Location

Orlando, FL

ISSN

0569-5503

Print_ISBN

0-7803-7038-4

Type

conf

DOI

10.1109/ECTC.2001.927722

Filename

927722