DocumentCode :
3162450
Title :
Simultaneous switching noise suppression for high speed systems using embedded decoupling
Author :
Hobbs, Joseph M. ; Windlass, Hitesh ; Sundaram, Venky ; Chun, Sungjun ; White, George E. ; Swaminathan, Madhavan ; Tummala, Rao R.
Author_Institution :
Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2001
fDate :
2001
Firstpage :
339
Lastpage :
343
Abstract :
High performance computing systems are driving towards higher clock speeds, more switching circuits, and lower operating voltages. Simultaneous switching noise (SSN) will greatly affect signal integrity in such complex future mixed signal systems. It has been reported that in addition to inductance effects, power plane bounce also becomes a critical factor for packages containing many power and ground vias in parallel. Discrete surface mount capacitors are currently being used by designers to suppress noise. As part of the System on a Package (SOP) concept being developed at the Packaging Research Center (PRC), Georgia Tech, a test vehicle to demonstrate the suppression of SSN using embedded decoupling capacitors is being implemented. This test vehicle uses thin film sequential buildup technology on a low-cost organic platform incorporating polymer-ceramic nanocomposite dielectrics. The design rules for the test vehicle were developed using SOP substrate materials and processes; furthermore, Ansoft along with Matlab were used to model the microstrip transmission lines. The layout was done using Cadence Advanced Package Designer (APD) and output into Gerber format for fabrication. The current test vehicle uses a 300 mm ×300 mm high Tg FR-5 base substrate with four metal layers on each side. Photoimageable epoxy dry films of 25 μm and 75 μm thickness were used as the low k (3.4-3.9) sequential build-up dielectric. A novel photoimageable polymer ceramic nanocomposite material developed at the PRC was used for the high k (25-50) thin films. Low cost materials and large area processes were used for the substrate fabrication including dry film printed wiring board (PWB) photoresists, vacuum lamination and spin/meniscus coating for dielectric deposition, full-field UV lithography, and electroless and electrolytic copper metallization. Simulations confirm that the SSN will be suppressed by a factor often when using the high k material as the capacitor dielectric. This paper presents the design, fabrication and validation of embedded decoupling for SOP technology
Keywords :
capacitors; dielectric thin films; filled polymers; interference suppression; nanostructured materials; surface mount technology; Ansoft model; Cadence APD; FR-5 substrate; Gerber format; Matlab model; PWB photoresist; SOP substrate; UV lithography; discrete surface mount capacitor; electroless copper metallization; electrolytic copper metallization; embedded decoupling capacitor; high-speed computing system; inductance; microstrip transmission line; organic high-k dielectric thin film; photoimageable epoxy dry film; polymer-ceramic nanocomposite material; power plane bounce; sequential build-up deposition; simultaneous switching noise suppression; spin/meniscus coating; substrate fabrication; system-on-a-package; vacuum lamination; Capacitors; Circuit noise; Dielectric substrates; Dielectric thin films; Fabrication; High K dielectric materials; Packaging; Partial response channels; Polymer films; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2001. Proceedings., 51st
Conference_Location :
Orlando, FL
ISSN :
0569-5503
Print_ISBN :
0-7803-7038-4
Type :
conf
DOI :
10.1109/ECTC.2001.927746
Filename :
927746
Link To Document :
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