Title :
Evolution of high power solid-state microwave amplifiers
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
This paper summarizes some of the milestones in the development of high power microwave amplifiers (HPAs), above 1 GHz, in the past 10 years. It is concerned primarily with amplifiers using gallium arsenide (GaAs) field effect transistors (FETs) and monolithic microwave integrated circuits (MMICs) since these devices have enabled the design of HPAs that have been evolutionary in terms of power levels, bandwidths, and efficiencies that are still not possible using silicon devices
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect transistor circuits; gallium arsenide; 1 GHz; GaAs; GaAs FET; MMIC; airborne data communication; field effect transistors; high power solid-state microwave amplifiers; military applications; monolithic microwave integrated circuits; radar transmitter; FET integrated circuits; Gallium arsenide; High power amplifiers; MMICs; Microwave FET integrated circuits; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Power amplifiers; Solid state circuits;
Conference_Titel :
Aerospace Conference, 1999. Proceedings. 1999 IEEE
Conference_Location :
Snowmass at Aspen, CO
Print_ISBN :
0-7803-5425-7
DOI :
10.1109/AERO.1999.793161
