Title :
Screen printed contacts formation by rapid thermal annealing in multicrystalline silicon solar cells
Author :
El Omari, H. ; Boyeaux, J.P. ; Laugier, A.
Author_Institution :
Lab. de Phys. de la Matiere, CNRS, Villeurbanne, France
Abstract :
The aim of the present work is to optimize the rapid thermal annealing (RTA) parameters in both front and back screen printed contacts realization on Polix p-type multicrystalline silicon phosphorus diffused solar cells. The RTA treatments were carried out at various temperatures from 500 to 750°C and annealing time ranging from 10 to 120 s in an Ar ambiance. The contacts parameters are obtained according to transmission line model measurements. A good RTA cycle is obtained with a temperature plateau of 650°C-700°C and an annealing time of 120 s. The cooling down rate seems a main parameter. The influence of the cooling down rate on the contact resistance is more important in the case of the rear contact. The specific contact resistance is more sensitive to cooling down rate and a value of -10°C/s seems to be the best rate for both front and back contacts
Keywords :
electrical contacts; elemental semiconductors; rapid thermal annealing; semiconductor device testing; semiconductor doping; semiconductor-metal boundaries; silicon; solar cells; thick film devices; 10 to 120 s; 120 s; 500 to 750 C; 650 to 700 C; Si; annealing time; back contacts; contact resistance; cooling down rate; front contacts; multicrystalline silicon solar cells; rapid thermal annealing; screen printed contacts; solar cell production; temperature plateau; transmission line model measurements; Argon; Contact resistance; Cooling; Electrical resistance measurement; Photovoltaic cells; Rapid thermal annealing; Silicon; Temperature distribution; Temperature sensors; Transmission line measurements;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564074
