Title :
Design of Class F-1 Power Amplifier Using GaN pHEMT for Industrial Applications
Author :
Al Tanany, Ahmed ; Sayed, Ahmed ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin
Abstract :
This work presents a Class F-1 power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8% (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves an optimum load for the transistor at the fundamental frequency.
Keywords :
gallium compounds; high electron mobility transistors; microstrip resonators; power amplifiers; wide band gap semiconductors; GaN; class F-1 power amplifier; efficiency 60.8 percent; first four harmonics; frequency 2.35 GHz; industrial applications; maximum drain efficiency; microstrip resonator; optimum load resonator; pHEMT; Circuits; Gallium nitride; High power amplifiers; Microstrip resonators; Microwave amplifiers; PHEMTs; Power amplifiers; Power generation; Switches; Zero voltage switching; Class F-1; GaN HEMT; High Efficiency; Power Amplifier; Resonator;
Conference_Titel :
Microwave Conference, 2009 German
Conference_Location :
Munich
Print_ISBN :
978-3-9812668-0-1
Electronic_ISBN :
978-3-8007-3150-3
DOI :
10.1109/GEMIC.2009.4815893
