• DocumentCode
    3162669
  • Title

    Copper ECMP in phosphoric acid-BTA slurries

  • Author

    Zhai, Wenjie ; Yang, Yangzhan

  • Author_Institution
    Sch. of Mechatron. Eng., Harbin Inst. of Technol., Harbin, China
  • fYear
    2011
  • fDate
    16-18 April 2011
  • Firstpage
    166
  • Lastpage
    169
  • Abstract
    Copper ECMP bench test was conducted for copper in 30 wt% H3PO4+0.01M BTA slurry on a three-electrode tribo-electrochemical system. Electrochemical and tribological performance of copper in the slurry are studied. The inhibition effect of BTA is shown by material removal rate (MRR) and after-ECMP topographies of copper at different anodic potentials are analyzed by AFM. Results show that the applied anodic potential should be low enough to prevent corrosive pitting.
  • Keywords
    anodisation; copper; corrosion protection; electrolytic polishing; electromechanical effects; planarisation; slurries; tribology; after-ECMP topographies; copper ECMP; corrosive pitting; electrochemical mechanical planarization; material removal rate; phosphoric acid-BTA slurries; three-electrode triboelectrochemical system; Copper; Corrosion; Electric potential; Rough surfaces; Surface morphology; Surface roughness; Surface topography; benzotriazole (BTA); copper; electrochemical mechanical planarization (ECMP); phosphoric acid;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Consumer Electronics, Communications and Networks (CECNet), 2011 International Conference on
  • Conference_Location
    XianNing
  • Print_ISBN
    978-1-61284-458-9
  • Type

    conf

  • DOI
    10.1109/CECNET.2011.5768981
  • Filename
    5768981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3162669