Title :
Copper ECMP in phosphoric acid-BTA slurries
Author :
Zhai, Wenjie ; Yang, Yangzhan
Author_Institution :
Sch. of Mechatron. Eng., Harbin Inst. of Technol., Harbin, China
Abstract :
Copper ECMP bench test was conducted for copper in 30 wt% H3PO4+0.01M BTA slurry on a three-electrode tribo-electrochemical system. Electrochemical and tribological performance of copper in the slurry are studied. The inhibition effect of BTA is shown by material removal rate (MRR) and after-ECMP topographies of copper at different anodic potentials are analyzed by AFM. Results show that the applied anodic potential should be low enough to prevent corrosive pitting.
Keywords :
anodisation; copper; corrosion protection; electrolytic polishing; electromechanical effects; planarisation; slurries; tribology; after-ECMP topographies; copper ECMP; corrosive pitting; electrochemical mechanical planarization; material removal rate; phosphoric acid-BTA slurries; three-electrode triboelectrochemical system; Copper; Corrosion; Electric potential; Rough surfaces; Surface morphology; Surface roughness; Surface topography; benzotriazole (BTA); copper; electrochemical mechanical planarization (ECMP); phosphoric acid;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2011 International Conference on
Conference_Location :
XianNing
Print_ISBN :
978-1-61284-458-9
DOI :
10.1109/CECNET.2011.5768981
