Title :
Effect of porous silicon layer re-emission on silicon solar cell photocurrent
Author :
Skryshevsky, V.A. ; Laugier, A. ; Strikha, V.I. ; Vikulov, V.A. ; Kaminski, Ashley
Author_Institution :
Radiophys. Dept., Shevchenko (T.G.) State Univ., Kiev, Ukraine
Abstract :
The feasibility of the improvement of crystalline Si solar cells is considered by employing a thick porous Si (PS) layer. The influence of re-emission, absorption and reflectivity of PS on the photocurrent of the solar cell are studied using numerical simulations and experimental verification. The measurement of additional photocurrent caused by re-emission of PS is shown to allow to evaluate the external quantum efficiency of PS photoluminescence which can achieve approximately 4-5% on n-Si. In this case the effect of PS re-emission on short circuit current of commercial solar cells reaches up to a few percent for terrestrial applications. The calculated total benefit of a PS antireflection coating on short-circuit current can be up to 35-41%
Keywords :
elemental semiconductors; numerical analysis; photoconductivity; photoemission; photoluminescence; semiconductor device models; semiconductor device testing; silicon; solar cells; Si; absorption; crystalline solar cells; external quantum efficiency; numerical simulation; performance testing; photoluminescence; porous silicon layer re-emission; reflectivity; short-circuit current; solar cell photocurrent; Absorption; Coatings; Crystallization; Numerical simulation; Photoconductivity; Photoluminescence; Photovoltaic cells; Reflectivity; Short circuit currents; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564075