DocumentCode :
3162769
Title :
Diagnostic of silicon carbide surge arresters
Author :
Kanashiro, Arnaldo ; Tatizawa, Hédio ; Zanotti, Milton, Jr. ; Obase, Paulo F. ; Bacega, Wilson R.
Author_Institution :
Inst. of Electrotechnics & Energy, Univ. of Sao Paulo, São Paulo, Brazil
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
365
Lastpage :
368
Abstract :
The gapped silicon carbide (SiC) surge arresters are being removed from the operating system of the utilities, however, a large number are still installed in the power system. Therefore, it is very important to give priority to SiC surge arresters that are more degraded in order to replace them by the zinc oxide (ZnO) ones. This work shows that the leakage current measurement, normally used as diagnostic technique for the ZnO surge arresters, can also provide important information concerning the condition of the SiC surge arresters. Results from the laboratory tests and substation measurements are presented.
Keywords :
arresters; leakage currents; silicon compounds; zinc compounds; SiC; ZnO; leakage current; power system; silicon carbide surge arresters; zinc oxide; Arresters; Current measurement; Leakage current; Silicon carbide; Substations; Surges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Voltage Engineering and Application (ICHVE), 2010 International Conference on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-8283-2
Type :
conf
DOI :
10.1109/ICHVE.2010.5640750
Filename :
5640750
Link To Document :
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