A G-Band 160 GHz T/R Module Concept for Planetary Landing Radar

Author

Samoska, Lorene ; Kangaslahti, Pekka ; Pukala, David ; Sadowy, Greg ; Pollard, Brian ; Hodges, Richard

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

757

Lastpage

760

Abstract

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

Keywords

III-V semiconductors; MIMIC; MMIC power amplifiers; Mars; gallium compounds; indium compounds; low noise amplifiers; p-i-n diodes; radar equipment; space vehicle electronics; spaceborne radar; transceivers; wide band gap semiconductors; 160 GHz; G-band MMIC low noise amplifiers; G-band transmit/receive module; HEMT; InGaAs; InP; Mars; SPDT PIN diode switch; planetary landers; planetary landing radar; power amplifiers; precision altimetry; velocimetry measurements; Altimetry; Extraterrestrial measurements; High power amplifiers; Indium gallium arsenide; Low-noise amplifiers; MMICs; Radar applications; Radar measurements; Semiconductor device measurement; Switches; HEMTs; InP; MMICs; amplifiers; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281012

Filename

4057928