DocumentCode :
3162913
Title :
A Direct Method For Measuring The Gate Oxide Capwi-hnces Of MOSFETS
Author :
Allen, Richard A. ; Piña, Cesar A. ; Buehler, Martin G.
Author_Institution :
California Institute Of Technology
fYear :
1988
fDate :
22-23 Feb. 1988
Firstpage :
45
Lastpage :
48
Keywords :
Capacitance; Dielectric materials; Dielectrics and electrical insulation; MOS capacitors; MOSFETs; Measurement techniques; Permittivity; Silicon; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location :
Long Beach, CA, USA
Type :
conf
DOI :
10.1109/ICMTS.1988.672927
Filename :
672927
Link To Document :
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