DocumentCode
3163002
Title
A Dual-Band VCO Integrated with RF-MEMS Switches and Inductors
Author
Kawashima, Munenari ; Yamaguchi, Yo ; Kuwabara, Kei ; Sato, Norio ; Machida, Katsuyuki ; Uehara, Kazuhiro
Author_Institution
NTT Network Innovation Labs., NTT Corp., Yokosuka
fYear
2006
fDate
10-15 Sept. 2006
Firstpage
795
Lastpage
798
Abstract
The authors propose a dual-band VCO integrated with RF-MEMS devices using flip-chip mounting. A wide frequency band switching capability is realized using low-loss RF-MEMS switches and high-Q inductors to switch one of series-connected inductors. A VCO with RF-MEMS was fabricated and measured. The carrier frequency of the dual-band VCO was tuned from 4.443 to 4.695 GHz and from 5.106 to 5.411 GHz. The phase noise was -103 dBc/Hz at a 1-MHz offset from the carrier frequency of 4.443 GHz
Keywords
flip-chip devices; inductors; microswitches; microwave oscillators; phase noise; voltage-controlled oscillators; 4.443 to 4.695 GHz; 5.106 to 5.411 GHz; RF-MEMS inductors; RF-MEMS switches; dual-band voltage controlled oscillators; flip-chip mounting; phase noise; Dual band; Encapsulation; Frequency; Inductance; Inductors; Radiofrequency microelectromechanical systems; Switches; Tuning; Varactors; Voltage-controlled oscillators; F-MEMS switches; RF-MEMS inductors; VCOs; dual-band; flip-chip mounting;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. 36th European
Conference_Location
Manchester
Print_ISBN
2-9600551-6-0
Type
conf
DOI
10.1109/EUMC.2006.281039
Filename
4057938
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