Broadband Single-Pole Multithrow RF-MEMS Switches for Ka-Band

This paper presents the design, fabrication and RF-characterization of SP3T, SP4T and SP6T RF-MEMS switches. All devices are fabricated on a 200 mum thin silicon substrate. The insertion loss of the SP3T is almost constant from 18 - 40 GHz with a value better than -0.5 dB. The SP4T and SP6T show an insertion loss better than -0.9 dB from 18 - 40 GHz. The isolation is better than -17 dB for all switches in almost all switching states from 18 - 40 GHz. Furthermore, an on-wafer absorbing structure, acting as a quasi 50 Omega match is shown, exhibiting a return loss of better than -10 dB for frequencies above 20 GHz.