KTN ferroelectric thin-films: Application to the realization of tunable microwave devices

Author

Laur, Vincent ; Moussavou, Arnaud ; Rousseau, Anthony ; Tanne, Gerard ; Laurent, Paul ; Bouquet, Valerie ; Guilloux-Viry, Maryline ; Huret, Fabrice

Author_Institution

LEST-UMR CNRS, Brest

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

835

Lastpage

838

Abstract

Interdigital capacitors were fabricated on KTa_0.5Nb_0.5O₃/sapphire substrate. Since their measurements demonstrated the high tuning factor of KTNs, we designed and fabricated three distributed phase shifters. To our knowledge, they are the first phase-shifters realized on KTN thin films at microwave frequencies. These circuits present interesting phase-shifts, but their figures of merit are weakened by high KTN dielectric losses mainly responsible for the observed insertion losses; thus, in a near future our investigations will mainly focused on this issue

Keywords

capacitors; dielectric losses; ferroelectric thin films; microwave devices; phase shifters; potassium compounds; sapphire; tantalum compounds; KTN ferroelectric thin-films; KTa_0.5Nb_0.5O₃-Al₂O ₃; dielectric loss; distributed phase shifters; ferroelectric materials; insertion loss; interdigital capacitors; microwave frequencies; phase-shifts; tunable microwave devices; Capacitors; Dielectric losses; Dielectric measurements; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Microwave devices; Niobium; Thin films; Tunable circuits and devices; Ferroelectric materials; Thin films; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281049

Filename

4057948